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MJE521 Plastic Medium-Power NPN Silicon Transistor
These devices are designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry.
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* DC Current Gain - hFE = 40 (Min) @ IC * *
= 1.0 Adc Complementary to PNP MJE371 Pb-Free Package is Available*
4 AMPERES POWER TRANSISTORS NPN SILICON 40 VOLTS, 40 WATTS
MAXIMUM RATINGS
IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII III I I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII II III III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIII I
Rating Symbol VCEO VCB VEB IC IB Value 40 40 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current Base Current 4.0 4.0 8.0 2.0 - Continuous - Peak - Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 40 0.32 W mW/_C _C TJ, Tstg -65 to +150
TO-225 CASE 77 STYLE 1 3 21
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol qJC
Max
Unit
Thermal Resistance, Junction-to-Case
3.12
_C/W
YWW JE521G
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
Y WW JE521 G
= Year = Work Week = Device Code = Pb-Free Package
ORDERING INFORMATION
Device MJE521 MJE521G Package TO-225 TO-225 (Pb-Free) Shipping 500 Units/Box 500 Units/Box
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
1
February, 2006 - Rev. 5
Publication Order Number: MJE521/D
II II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ON CHARACTERISTICS OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
DC Current Gain (Note 1) (IC = 1.0 Adc, VCE = 1.0 Vdc)
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0)
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0)
Characteristic
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MJE521
2 VCEO(sus) Symbol ICBO IEBO hFE Min 40 40 - - Max 100 100 - - mAdc mAdc Unit Vdc -
MJE521
10 IC, COLLECTOR CURRENT (AMP) 5.0 3.0 2.0 dc 1.0 0.5 0.3 0.2 0.1 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C 2.0 3.0 5.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 TJ = 150C 5.0 ms 1.0 ms
The data of Figure 1 based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided (T Jpk ) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
Figure 1. Active-Region Safe Operating Area
1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 TJ = 150C 25C -55 C
1.5 VCE = 1.0 V VOLTAGE (VOLTS) 1.2 TJ = 25C
0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V
0.3 VCE(sat) @ IC/IB = 10
10 2.0
3.0 5.0 10
20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA)
0 2.0
3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
Figure 3. "On" Voltage
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE qJC(t) = r(t) qJC qJC = 5.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk)
0.1 0.07 0.05 0.03 0.02 0.01 0.01
t1
t2
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0 3.0 5.0 t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
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3
MJE521
PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z
-B- U Q
F M
C
-A-
123
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M M
A
M
B
M
B
M
DIM A B C D F G H J K M Q R S U V
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
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MJE521/D

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